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FM20L08 poss ferroelectric random access memory’s principle and application
Thursday, November 6th, 2008 at 02:49 | No commentsCategories: StorageShort Content: Abstract: This article mainly introduced the poss ferroelectric random access memory FM20L08 principle and the application. This memory has not only overcome EEPROM and the Flash memory write time long, scratches writes the number of times few and so on shortcomings, moreover increased the voltage monitor and the software control writes the protection function, the 1MB storage capacity substitutes the static stochastic memory sufficiently. Introduced that FM20L08 the pin function and the principle of work, and based on this give ...
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